Dr. Khin Maung Latt
         Professor
         B.Sc Hons, M.Sc (Physics),Ph.D(NTU, Singapore)
         Department of Engineering Physics

Professor Dr Khin Maung Latt spent his life working for physics as a researcher and professor, MTU’s Department of Engineering Physics. Prof Latt has over twenty two years of experience in teaching and research of Solid State Physics, Semiconductor Physics, Microelectronic Fabrication, Thin Film Deposition, Nanofabrication, PIC-based Applications, Solar cells fabrication and Applications. He is author and co-author of more than 20 publications in international journal, 5 conference proceedings.

In addition to responsibility as Head of Department of Engineering Physics, Prof Latt devoted himself to a variety of research projects in MTU. A dedicated educator who received many prestige’s awards and his biographical data was published in International Biographical Reference Books.

Selected Publications

1. "Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing", Materials Science and Engineering B, Volume 94, Issue 1, 15 June 2002, Pages 111-120, Khin Maung Latt, Y. K. Lee, T. Osipowicz and H. S. Park.
2. "Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure", Materials Science and Engineering B, Volume 90, Issues 1-2, 7 March 2002, Pages 25-33, Khin Maung Latt, H. S. Park, H. L. Seng, T. Osipowicz, Y. K. Lee and S. Li
3. "Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2",
   Materials Science and Engineering B, Volume 68, Issue 2, 27 December 1999, Pages 99-103, Y. K. Lee, Khin Maung Latt, K. JaeHyung, T. Osipowicz and K. Lee
4. "The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure", Materials Science and Engineering B, Volume 84, Issue 3, 20 July 2001, Pages 217-223, Khin Maung Latt, Y. K. Lee, S. Li, T. Osipowicz and H. L. Seng
5. "Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure", Materials Science and Engineering B, Volume 83, Issues 1-3, 21 June 2001, Pages 1-7, Khin Maung Latt, Kangsoo Lee, Thomas Osipowicz and Y. K. Lee
6. "Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2", Materials Science and Engineering B, Volume 77, Issue 3, 29 September 2000, Pages 282-287, Y. K. Lee, Khin Maung Latt, Kim JaeHyung, Thomas Osipowicz, Chiam Sher-Yi and Kangsoo Lee
7. "Characterization of interfacial reactions between ionized metal plasma deposited Al–0.5 wt.% Cu and Ti on SiO2 ", Materials Science and Engineering B, Volume 77, Issue 1, 7 August 2000, Pages 101-105, Y. K. Lee, Khin Maung Latt, S. Li, T. Osipowicz and S. Y. Chiam
8. "Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2",
   Materials Science in Semiconductor Processing, Volume 3, Issue 3, June 2000, Pages 179-184, Y. K. Lee, Khin Maung Latt, Kim Jaehyung and Kangsoo Lee
9. "Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure", Materials Science in Semiconductor Processing, Volume 3, Issue 3, June 2000, Pages 191-194, Y. K. Lee, Khin Maung Latt, Thomas Osipowicz and Cham Sher-Yi
10. "Effect of heat transfer on the C49–C54 phase transformation in TiSi2 thin film", Materials Science in Semiconductor Processing, Volume 2, Issue 4, 1999,Pages 329-333, Zhang Lin, Khin Maung Latt and Y. K. Lee
11. "Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide", Khin Maung Latt, Y. K. Lee, H. L. Seng, T. Osipowicz, Journal of Materials Science, Volume 36, Number 24, Page 5845 – 5851, December 2001.
12. "Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure", Khin Maung Latt, C. Sher-Yi, T. Osipowicz, K. Lee, Y. K. Lee, Journal of Materials Science,   Volume 36, Number 23 , 5705 – 5712, December 2001.
13. "Study on electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure", Khin Maung Latt, Y. K. Lee, J. A. Van Kan, A. A. Mahabai, Journal of Materials Science, Volume 36, Number 22 5475 – 5480
14. "Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2",  Khin Maung Latt, H. S. Park, S. Li, Liu Rong, T. Osipowicz, W. G. Zhu, Y. K. Lee, Volume 37, Number 10,  Journal of Materials Science 1941 – 1949.
15. "Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wtCu/Ti/SiO2/Si structure", Y. K. Lee, Khin Maung Latt, Kim Jaehyung, T. Osipowicz, Sher-Yi Chiam, Kangsoo Lee, Journal of Materials Science, Volume 35, Number 23 , 5857 – 5860, December 2000. 
16. "Study of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure", Khin Maung Latt, Kangsoo Lee  and Y. K. Lee, Journal of Materials Science Letters , Volume 20, Number 6 559 – 562, March 2001
17. "High Density Diffusion Barrier of Ionized Metal Plasma Deposited Ti in Al-0.5%Cu/Ti/SiO2/Si Structure", S. Li, Y.K. Lee, W. Gao, T. White, Z.L. Dong and Khinn Maung Latt, Journal of Vacuum Science and Technology B 19 (2), 388 (2001).
18. "Formation of Cu Diffusion Channels in Ta layer of Cu/Ta/SiO2/Si Structure", S. Li, Z.L. Dong, Khin Maung Latt, H.S. Park and T. White; Appl. Phys. Lett. 80, April 1 (2002).
19. "Breakdown mechanisms of Cu interconnect structure for advanced semiconductor devices", H.S. Park, S. Li and Khin Maung Latt, J. Vac. Sci. & Tech. B 2004.

List of Publications ( International Conference )

1. Lee Y. K., Khin Maung Latt, Kim Jae Hyeong , Kangsoo Lee, "Study of Diffusion Barrier Properties of Ionized Metal Plasma (IMP) Deposited TaN Between Cu and SiO2", 16th VMIC(VLSI Multilevel Interconnection Conference) Conference proceedings, 1999, Santa Clara, USA.
2. Lee Y. K., Khin Maung Latt, Kim Jae Hyeong, Lee Kangsoo, "Comparative Analysis and Study of IMP (Ionized Metal Plasma)-Cu and CVD (Chemical Vapor Deposit)-Cu on Diffusion Barrier Properties of IMP-TaN", 17th VMIC(VLSI Multilevel Interconnection Conference) Conference proceedings, 2000, Santa Clara, USA.
3. Khin Maung Latt, Y.K. Lee, "Behaviour of Electroplated Copper film in the EPCu/IMPCu/IMPTaN/SiO2/Si Multilayer Structure", 1st International Conference Advanced Materials Processing, Rotorua, New Zealand, 2000.
4. "Comparism of TiN and TiAlN as a diffusion barrier". Khin Maung Latt. , YK Lee. , HL Seng, T. Osipowicz. SYMPOSIUM L – Materials, Technology, and Reliability for Microelectronics Material Research Society (MRS), USA.
5. "Tantalum diffusion barrier performance in the Cu/Ta/SiO2/Si multilayer structure". Khin Maung Latt, Yong Keun Lee, Hun Sub Park SYMPOSIUM D – Crystallization and Interfacial Processes, Material Research Society (MRS), USA.

Worldwide Recognition

Biographical Data was published in the following International Biographical  Reference Books.

1. International Directory of Experts and Expertise, Premiere Edition.
2. MARQUIS Who’s Who in the World
3. MARQUIS Who’s Who in Asia 1st Edition-2007.
4. MARQUIS Who’s Who in Science and Engineering 9th Edition-2006-2007.
5. MARQUIS Who’s Who in Science and Engineering 8th Edition-2004-2005.
6. MARQUIS Who’s Who in Science and Engineering 7th Edition-2003-2004.
7. 2000 Outstanding Scientists of the 21st Century.
8. 21st Century Award for Achievement.
9. Living Science Award.
10. The Da Vinci Diamond.
11. International Scientist of the Year-2004.
12. International Educator of the Year-2004.
13. Living Legends -2004.
14. Man of The Year 2005.
15. Cambridge Blue Book-2005.